This innovative product is based on Paragon's patented technology to monitor the Radio Frequency (RF) envelope and modulate the amplification. The product attains up to 6dB improvement in output power, as well as major efficiency and heat dissipation improvements over existing solutions. The XNN PA booster chip will be manufactured on Tower's 0.18-micron process, including its RF-CMOS feature, at Tower's FAB2 facility.
"With Tower's state-of-the-art RF-CMOS process and invaluable technical support including design services, we were able to attain outstanding performance enhancements to Wi-Fi and WiMax PA's of up to 6dB in output power, 50% in efficiency and heat dissipation, while maintaining the same linearity criteria of the PA," said Zeev Cohen, VP R&D, Paragon. "We have proven on silicon, by using complex test chip, that our concept works and our product will attain the performance targets. Tower has provided a one-stop shop in terms of capabilities from design to manufacturing. Tower's teams assisted in taking the Paragon concept from patent to silicon reality through Tower Design services group and RF specialists. We are very pleased with our partnership with Tower and look forward to a long-term business relationship."
"The Wi-Fi market is exploding and with the new 802.11n MIMO based standard it is expected to grow exponentially over the next 4 to 5 years," commented Eli Plotnik, CEO, Paragon. "This market, together with the emerging WiMax and next generation Cellular LTE markets, positions Paragon with the high quality XNN PA booster chip that will be manufactured at Tower, as a market leader in this field."
